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STTH102
High efficiency ultrafast diode
Main product characteristics
IF(AV) VRRM Tj (max) VF(max) trr (max) 1A 200 V 175 C 0.78 V 20 ns
A
A
K
K
DO-41 STTH102
Features and benefits

Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature
SMA (JEDEC DO-214AC) STTH102A
Description
The STTH102, which is using ST's new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Table 1.
Symbol VRRM IF(AV) Repetitive peak reverse voltage SMA Average forward current DO-41 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage SMA
Order codes
Part Number STTH102A STTH102 STTH102RL Marking U12 STTH102 STTH102
Absolute ratings (limiting values)
Parameter Value 200 TL = 148 C = 0.5 TL = 130 C = 0.5 tp = 10 ms Sinusoidal DO-41 50 -65 to + 175 175 10000 C C V/s 1 40 A Unit V A
IFSM Tstg Tj dV/dt
November 2006
Rev 5
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www.st.com 7
Characteristics
STTH102
1
Table 2.
Symbol Rth(j-l)
Characteristics
Thermal resistance
Parameter SMA Junction to lead Lead length = 10 mm DO-41 50 Value 30 C/W Unit
Table 3.
Symbol IR (1)
Static Electrical Characteristics
Parameter Reverse leakage current Tests conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VR = VRRM IF = 700 mA (SMA) IF = 1 A IF = 1 A 0.68 Min. Typ Max. 1 A 1 25 0.90 0.97 0.78 V Unit
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 s, < 2%
To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.130 IF2(RMS) Table 4.
Symbol trr tfr VFP
Dynamic electrical characteristics
Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tj = 25 C Tj = 25 C Tj = 25 C Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1 A IF = 1 A dIF/dt = 50 A/ms VFR = 1.1 x VFmax IF = 1 A dIF/dt = 50 A/ms Min Typ 12 50 1.8 Max 20 Unit ns ns V
Figure 1.
Average forward power dissipation Figure 2. versus average forward current (SMA)
PF(AV)(W)
1.0
Average forward power dissipation versus average forward current (DO-41)
= 0.1 = 0.2 = 0.5
PF(AV)(W)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8
= 0.05
= 0.1
= 0.2
= 0.5
0.9 0.8
= 0.05
=1
0.7 0.6 0.5 0.4 0.3
=1
T
T
0.2 0.1
IF(AV)(A)
=tp/T
1.0
tp
0.0 1.2 0.00 0.25 0.50
IF(AV)(A)
0.75
=tp/T
1.00
tp
1.25
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STTH102
Characteristics
Figure 3.
Average forward current versus Figure 4. ambient temperature ( = 0.5) (SMA)
IF(AV)(A)
1.2
Rth(j-a)=Rth(j-I)
Average forward current versus ambient temperature ( = 0.5) (DO-41)
IF(AV)(A)
1.2
Rth(j-a)=Rth(j-I)
1.0
1.0
0.8
0.8
0.6
Rth(j-a)=120C/W
0.6
Rth(j-a)=110C/W
0.4
0.4
T
0.2 0.2
T
0.0 0
=tp/T
25
tp
50
Tamb(C)
0.0 75 100 125 150 175 0
=tp/T
25
tp
50
Tamb(C)
75 100 125 150 175
Figure 5.
Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu) = 35 m, recommended pad layout) (SMA)
1.0 0.9 0.8 0.7
Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41)
Zth(j-c)/Rth(j-c)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
Single pulse = 0.2 = 0.1 = 0.5
Zth(j-c)/Rth(j-c)
0.6 0.5 0.4
= 0.5
T
0.3 0.2
= 0.2 = 0.1 Single pulse
T
tp(s)
1.E+00 1.E+01
=tp/T
1.E+02
tp
1.E+03
0.1 0.0
tp(s)
1.E+00 1.E+01
=tp/T
1.E+02
tp
0.0 1.E-01
1.E-01
1.E+03
Figure 7.
Forward voltage drop versus forward current
Figure 8.
Junction capacitance versus reverse voltage applied (typical values)
IFM(A)
100.0 100
C(pF)
F=1MHz VOSC=30mVRMS Tj=25C
Tj=125C (maximum values)
10.0
Tj=125C (typical values)
Tj=25C (maximum values)
10
1.0
VFM(V)
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1 1 10
VR(V)
100 1000
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Characteristics
STTH102
Figure 9.
trr(ns)
70 60 50 40
Reverse recovery time versus dIF/dt Figure 10. Peak recovery current versus dIF/dt (90% confidence) (90% confidence)
IRM(A)
3.5
IF=1A VR=100V Tj=125C
3.0 2.5 2.0
IF=1A VR=100V Tj=125C
Tj=125C
Tj=125C
30
Tj=25C
1.5 1.0 0.5
Tj=25C
20 10
dIF/dt(A/s)
0 1 10 100 1000 0.0 1 10
dIF/dt(A/s)
100 1000
Figure 11. Reverse recovery charges versus dIF/dt (90% confidence)
Qrr(nC)
35.0 32.5 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 1 10
Tj=25C Tj=125C IF=1A VR=100V
Figure 12. Relative variations of dynamic parameters versus junction temperature
IRM; trr; Qrr [Tj] / IRM; trr; Qrr [Tj =25C]
3.5
IF=IF(AV) dIF/dt=200A/s VR=100V
3.0
QRR
2.5
2.0
trr
1.5
IRM
dIF/dt(A/s)
100 1000
Tj(C)
1.0 25 50 75 100 125 150 175
Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 m) (SMA)
Rth(j-a)(C/W)
120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 14. Thermal resistance versus lead length (DO-41)
Rth(C/W)
120 110
Rth(j-a)
100 90 80 70 60 50 40 30 20
Rth(j-I)
S(cm)
10 0 5 10
Lleads(mm)
15 20 25
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STTH102
Package information
2
Package information
Epoxy meets UL94 V0 SMA Dimensions
Dimensions
E1
Table 5.
Ref.
Millimeters Min. Max. 2.45 0.20 1.65 0.40 2.90 5.35 4.60 1.50
Inches Min. 0.075 0.002 0.049 0.006 0.089 0.189 0.156 0.030 Max. 0.094 0.008 0.065 0.016 0.114 0.211 0.181 0.059
D
A1 A2 b
1.90 0.05 1.25 0.15 2.25 4.80 3.95 0.75
E
c
A1
D E E1 L
C L
A2 b
Figure 15. Footprint (dimensions in mm)
1.4 2.63 1.4
1.64
5.43
Table 6.
DO-41 (Plastic) Package dimensions
Dimensions Ref.
OD OB
Millimeters Min. Max. 5.20 2.71
Inches Min. 0.160 0.080 1 Max. 0.205 0.107
A B
C A C
4.1 2 25.4 0.712
C D
0.863
0.028
0.034
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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Ordering information
STTH102
3
Ordering information
Ordering type STTH102A STTH102 STTH102RL Marking U12 STTH102 STTH102 Package SMA DO-41 DO-41 Weight 0.068 g 0.34 g 0.34 g Base qty 5000 2000 5000 Delivery mode Tape and reel Ammopack Tape and reel
4
Revision history
Date Jul-2003 Aug-2004 27-Jun-2005 21-Nov-2006 Revision 2A 3 4 5 Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). SMA and DO-41 datasheets merged Corrected error in title. Reformatted to current standards. Added Table 4. Dynamic electrical characteristics. Updated dimensions table for DO-41 Plastic package. Added cathode bands to package illustrations. Description of Changes
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STTH102
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